A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

09/21/2023

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by   Laura Bégon-Lours, et al.

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A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO_4 layer is fabricated at a low thermal budget ( 375^∘C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10 up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.