Evaluation of the Sensitivity of RRAM Cells to Optical Fault Injection Attacks

03/23/2021
by   Dmytro Petryk, et al.
0

Resistive Random Access Memory (RRAM) is a type of Non-Volatile Memory (NVM). In this paper we investigate the sensitivity of the TiN/Ti/Al:HfO2/TiN-based 1T-1R RRAM cells implemented in a 250 nm CMOS IHP technology to the laser irradiation in detail. Experimental results show the feasibility to influence the state of the cells under laser irradiation, i.e. successful optical Fault Injection. We focus on the selection of the parameters of the laser station and their influence on the success of optical Fault Injections.

READ FULL TEXT

Please sign up or login with your details

Forgot password? Click here to reset